US Patent Issued to ASM IP Holding on Feb. 10 for "Method and system for forming silicon nitride on a sidewall of a feature" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,644, issued on Feb. 10, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method and system for forming silicon nitride on a sidewall of a feature" was invented by Tomohiro Kubota (Hachioji, Japan) and Shinya Ueda (Hachioji, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming silicon nitride on a sidewall of a feature are disclosed. Exemplary methods include providing a substrate comprising a feature comprising a sidewall surface and a surface adjacent the sidewall surface, forming a silicon oxide layer overlying the sidewall surface and the surface adjacent the sidewall surface, using a cyclical deposition process, dep...