ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,764, issued on Dec. 23, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Substrate processing method" was invented by ChangWan Lee (Daejeon, South Korea), KyungEun Lee (Suwon-si, South Korea), HakJoon Lee (Seoul, South Korea) and SungKyu Kang (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress format...