ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,065, issued on Dec. 16, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Substrate processing method" was invented by TaeHee Yoo (Bucheon-si, South Korea) and SeWoong Jung (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method capable of suppressing void formation includes supplying a silicon precursor on a pattern structure to form a silicon source layer having a first opening; and supplying plasma on the silicon source layer to volatilize constituents other than silicon included in the silicon source layer to enlarge the first opening."
The patent was filed on March 14, 2022, under Applic...