ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,555, issued on April 7, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Toposelective vapor deposition using an inhibitor" was invented by Andrea Illiberi (Leuven, Belgium), Varun Sharma (Helsinki), Michael Givens (Oud-Heverlee, Belgium), Marko Tuominen (Helsinki) and Shaoren Deng (Ghent, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibitio...