ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,917, issued on Dec. 16, was assigned to Arm Ltd. (Cambridge, Great Britain).
"Inrush current management in a memory array" was invented by Andy Wangkun Chen (Austin, Texas) and Yew Keong Chong (Austin, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "Inrush current in a memory such as SRAM cache may be managed by using one or more integrated delay elements such as inverters, RC delay lines, and the like to significantly slow down power down signal propagation between memory instances in a memory array. The delay in some examples may be between memory instances, while in other examples the delay is also introduced between bitcell arrays within a ...