US Patent Issued to Ark HDPS Semiconductor Pte. Ltd. on Sept. 9 for "Semiconductor device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,324, issued on Sept. 9, was assigned to Ark HDPS Semiconductor Pte. Ltd. (Singapore).

"Semiconductor device and fabrication method thereof" was invented by Chin-Fu Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an epitaxial layer on a substrate, a first body region and a first trench gate structure in the epitaxial layer, a first planar gate and a first source electrode on the epitaxial layer, a first source region in the first body region, and a drain electrode under the substrate. The first trench gate structure is extended along a first direction and adjacent to the first body region. ...