US Patent Issued to Ark HDPS Semiconductor Pte. Ltd. on Dec. 16 for "Semiconductor device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,682, issued on Dec. 16, was assigned to Ark HDPS Semiconductor Pte. Ltd. (Singapore).

"Semiconductor device and fabrication method thereof" was invented by Chin-Fu Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first conductivity type, a well region having a second conductivity type and disposed on the substrate, a first trench and a second trench disposed in the well region. In addition, a first field plate and a first dielectric layer surrounding the first field plate are disposed in the first trench. A second field plate and a second dielectric layer surrounding the...