ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,578, issued on Sept. 22, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ion implantation for increased adhesion with resist material" was invented by Lei Liao (San Jose, Calif.), Yichuan Ling (Fremont, Calif.), Zhiyu Huang (Sunnyvale, Calif.), Hideyuki Kanzawa (Halfmoon, N.Y.), Fenglin Wang (Lexington, Mass.), Rajesh Prasad (Lexington, Mass.), Yung-Chen Lin (Gardena, Calif.), Chi-I Lang (Cupertino, Calif.), Ho-yung David Hwang (Cupertino, Calif.) and Lequn Liu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a ...