US Patent Issued to Applied Materials on Sept. 22 for "Endpoint detection in low open area and/or high aspect ratio etch applications" (California Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,608, issued on Sept. 22, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Endpoint detection in low open area and/or high aspect ratio etch applications" was invented by Lei Lian (Fremont, Calif.), Quentin Walker (Santa Clara, Calif.), Zefang Wang (Santa Clara, Calif.) and Shinichi Koseki (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (greater than1%) on a substrate in a processing chamber. The method begins by obtaining a reference emission curve. An etch operation i...