US Patent Issued to Applied Materials on Sept. 2 for "Methods for forming structures with desired crystallinity for MRAM applications" (California Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,557, issued on Sept. 2, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods for forming structures with desired crystallinity for MRAM applications" was invented by Lin Xue (San Diego), Jaesoo Ahn (Fremont, Calif.), Mahendra Pakala (Santa Clara, Calif.), Chi Hong Ching (Santa Clara, Calif.) and Rongjun Wang (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to f...