ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,766, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Substrate stress management using direct selective area processing" was invented by Morgan Evans (Manchester, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method may include providing a stress the substrate having a main surface, and forming a patterned stress compensation layer on the main surface, wherein the patterned stress compensation layer is formed by exposing the main surface to a processing beam while a movement of the ion beam with respect to the main surface takes place."
The patent was filed on Dec. 28, 2023, under Application No. 18/399,41...