US Patent Issued to Applied Materials on Oct. 20 for "Single gate three-dimensional (3D) dynamic random-access memory (DRAM) devices" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,433, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Single gate three-dimensional (3D) dynamic random-access memory (DRAM) devices" was invented by Chang Seok Kang (San Jose, Calif.) and Sung-Kwan Kang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including an active region, a cell transistor having a single gate above the active region in the first direction, and a cell capacitor having a bottom electrode layer that is electrically connected to the active region."

The p...