US Patent Issued to Applied Materials on Oct. 20 for "Mitigation of first wafer effect" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,772, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Mitigation of first wafer effect" was invented by Yongqian Gao (Sunnyvale, Calif.), Michael S. Jackson (Sunnyvale, Calif.), David T. Or (Santa Clara, Calif.), Chun-Chieh Wang (Sunnyvale, Calif.) and Le Zhang (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure relate to methods for reducing or eliminating the first wafer effect after chamber cleans for plasma etch processes. In some embodiments, the wafer support is maintained at an elevated temperature relative to the etch process. In some embodiments, the etch process is ...