US Patent Issued to Applied Materials on Oct. 20 for "Method and structure of low-k spacer using post-treatment for memory applications" (California, New York Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,440, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method and structure of low-k spacer using post-treatment for memory applications" was invented by Chang Seok Kang (Santa Clara, Calif.), Raghuveer Satya Makala (Campbell, Calif.), Fredrick Fishburn (Belmont, Calif.), Hsueh Chung Chen (Cohoes, N.Y.) and Balasubramanian Pranatharthiharan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of manufacturing 2D DRAM and 3D DRAM devices include etching a portion of a low-k spacer material from a substrate. The methods may include exposing the remaining portion of the low-k spacer material...