US Patent Issued to Applied Materials on Oct. 20 for "Contact layer formation with microwave annealing for NMOS devices" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,755, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Contact layer formation with microwave annealing for NMOS devices" was invented by Nicolas Louis Breil (San Jose, Calif.), Wolfgang R. Aderhold (Cupertino, Calif.), Shashank Sharma (Fremont, Calif.) and Nilay Anil Pradhan (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epita...