ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,015, issued on May 26, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Methods of forming conformal transition metal dichalcogenide films for memory and logic applications" was invented by Chandan Das (Singapore), Susmit Singha Roy (Campbell, Calif.), Bhaskar Jyoti Bhuyan (San Jose, Calif.), Supriya Ghosh (San Jose, Calif.), Jiecong Tang (Singapore), John Sudijono (Singapore), Abhijit Basu Mallick (Palo Alto, Calif.) and Mark Saly (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods...