US Patent Issued to Applied Materials on May 26 for "Low temperature n-type contact EPI formation" (California Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,849, issued on May 26, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Low temperature n-type contact EPI formation" was invented by Nicolas Breil (Alviso, Calif.), Matthew Cogorno (Sunnyvale, Calif.), Anchuan Wang (San Jose, Calif.), Byeong Chan Lee (San Jose, Calif.) and Manoj Vellaikal (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises non-selectively depositing an amorphous silicon layer on a top surface and a sidewall surface of at least one contact trench on a substrate and a crystalline silicon layer on a...