ALEXANDRIA, Va., March 31 -- United States Patent no. 12,590,368, issued on March 31, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Method of forming interconnect structure" was invented by Srinivas Gandikota (Santa Clara, Calif.), Geetika Bajaj (Cupertino, Calif.), Yixiong Yang (Fremont, Calif.), Seshadri Ganguli (Sunnyvale, Calif.), Tuerxun Ailihumaer (Santa Clara, Calif.), Yogesh Sharma (Sunnyvale, Calif.) and Tianyi Huang (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQz...