US Patent Issued to Applied Materials on March 31 for "Atomic layer deposition using novel oxygen-containing precursors" (Indian, American Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,590,369, issued on March 31, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Atomic layer deposition using novel oxygen-containing precursors" was invented by Geetika Bajaj (Mumbai, India), Amit Kumar Roy (Kolkata, India), Shonal Chouksey (Rupnagar, India), Seshadri Ganguli (San Jose, Calif.), Gopi Chandran Ramachandran (Mumbai, India) and Srinivas Gandikota (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing cham...