ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,437, issued on March 24, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Integrated dipole region for transistor" was invented by Geetika Bajaj (Cupertino, Calif.), Tianyi Huang (Santa Clara, Calif.), Hsin-Jung Yu (Santa Clara, Calif.), Yixiong Yang (Fremont, Calif.), Srinivas Gandikota (Santa Clara, Calif.), Chi-Chou Lin (San Jose, Calif.) and Pei Hsuan Lin (Millbrae, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which meet reduced thickness, lower the...