US Patent Issued to Applied Materials on March 24 for "Dopant diffusion with short high temperature anneal pulses" (California Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,455, issued on March 24, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Dopant diffusion with short high temperature anneal pulses" was invented by Wolfgang R. Aderhold (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for diffusing a dopant within a semiconductor device is described. The method includes performing a dynamic surface anneal in which a substrate is placed inside of a process volume with a mixture of an inert gas and a small amount of oxygen gas. The surface of the substrate is then exposed to one or more rapid laser pulses. The rapid laser bursts diffuse dopant from a doped layer...