US Patent Issued to Applied Materials on June 9 for "Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration" (Singaporean, American Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,980, issued on June 9, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration" was invented by Qihao Zhu (Sunnyvale, Calif.), Chi Hong Ching (Santa Clara, Calif.), Liqi Wu (San Jose, Calif.), Tsungjui Liu (San Jose, Calif.), Gaurav Thareja (Santa Clara, Calif.), Xinke Wang (Singapore), Feng Q. Liu (San Jose, Calif.), Xi Cen (San Jose, Calif.), Kai Wu (Palo Alto, Calif.), Yixiong Yang (San Jose, Calif.), Yuanhung Liu (San Jose, Calif.), Jiang Lu (Milpitas, Calif.), Rongjun Wang (Dublin, Calif.) and Xianmin Tang (San Jose, Calif.).

According to the abstract* rele...