US Patent Issued to Applied Materials on June 30 for "Implant for transistor bitline contact and junction formation" (Massachusetts Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,273, issued on June 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Implant for transistor bitline contact and junction formation" was invented by Yan Zhang (Westford, Mass.), Johannes M. Van Meer (Middleton, Mass.), Kyu-Ha Shim (Andover, Mass.) and Naushad K. Variam (Marblehead, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches herein provide devices, systems, and methods of transistor patterning using a frontside implant plus epitaxial process to form a graded junction having a high surface doping concentration for a vertical contact transistor bitline. One method may include delivering ions into a front side of a ...