US Patent Issued to Applied Materials on June 30 for "High-temperature implant for gate-all-around devices" (Massachusetts Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,337, issued on June 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"High-temperature implant for gate-all-around devices" was invented by Yan Zhang (Westford, Mass.), Kyu-Ha Shim (Andover, Mass.), Johannes M. Van Meer (Middleton, Mass.) and Naushad K. Variam (Marblehead, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches herein provide devices and methods for forming gate-all-around transistors with improved NBTI. One method may include forming a gate-all-around (GAA) stack including a plurality of alternating first layers and second layers, and forming a source/drain (S/D) cavity through the plurality of alternating ...