US Patent Issued to Applied Materials on June 2 for "Methods for atomic layer deposition of SiCO(N) using halogenated silyl amides" (California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,644,180, issued on June 2, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods for atomic layer deposition of SiCO(N) using halogenated silyl amides" was invented by Bhaskar Jyoti Bhuyan (San Jose, Calif.) and Mark Saly (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon pr...