US Patent Issued to Applied Materials on June 16 for "Anisotropic epitaxial growth of silicon germanium" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,522, issued on June 16, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Anisotropic epitaxial growth of silicon germanium" was invented by Chia Cheng Chin (Fremont, Calif.), Abhishek Dube (Fremont, Calif.), Yi-Chiau Huang (Fremont, Calif.) and Saurabh Chopra (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Generally, examples described herein relate to methods and semiconductor processing systems for anisotropically epitaxially growing a material on a silicon germanium (SiGe) surface. In an example, a surface of silicon germanium is formed on a substrate. Epitaxial silicon germanium is epitaxially grown on the surfa...