US Patent Issued to Applied Materials on July 15 for "Methods and apparatus for low temperature silicon nitride films" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,169, issued on July 15, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods and apparatus for low temperature silicon nitride films" was invented by Wenbo Yan (Sunnyvale, Calif.), Cong Trinh (Santa Clara, Calif.), Ning Li (San Jose, Calif.), Mihaela Balseanu (Sunnyvale, Calif.), Li-Qun Xia (Cupertino, Calif.) and Maribel Maldonado-Garcia (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250deg C. ...