US Patent Issued to Applied Materials on Jan. 27 for "Gate-all-around transistors and methods of forming" (California Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,509, issued on Jan. 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Gate-all-around transistors and methods of forming" was invented by Benjamin Colombeau (San Jose, Calif.), Balasubramanian Pranatharthiharan (San Jose, Calif.) and Lequn Liu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches herein provide devices and methods for forming optimized gate-all-around transistors. One method may include forming a plurality of nanosheets each comprising a plurality of alternating first layers and second layers, and etching the plurality of nanosheets to laterally recess the second layers relative to the first la...