US Patent Issued to Applied Materials on Jan. 20 for "Low-k and tantalum nitride barrier recovery using a soak process" (California Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,529,147, issued on Jan. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Low-k and tantalum nitride barrier recovery using a soak process" was invented by Mohammad Mahdi Tavakoli (Santa Clara, Calif.), Avgerinos V. Gelatos (Scotts Valley, Calif.) and Joung Joo Lee (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein describe a method of manufacturing an interconnect structure. The method includes depositing a selective tungsten layer on a tungsten containing surface, the tungsten containing surface is disposed within a feature, wherein the feature includes one or more surfaces that comprise a dielectric m...