ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,446, issued on Jan. 13, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Large area gapfill using volumetric expansion" was invented by Supriya Ghosh (San Jose, Calif.), Susmit Singha Roy (Sunnyvale, Calif.) and Abhijit Basu Mallick (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may incl...