US Patent Issued to Applied Materials on Feb. 17 for "Protective gas flow during wafer dechucking in PVD chamber" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,553,125, issued on Feb. 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Protective gas flow during wafer dechucking in PVD chamber" was invented by Fuhong Zhang (San Jose, Calif.) and Yu-Ru Li (Yunlin, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, system, and apparatus for substrate processing are provided for flowing a gas into a substrate processing chamber housing a substrate clamped to a chuck, wherein the gas is introduced at a location above the substrate; and while the gas is introduced, dechucking the substrate."

The patent was filed on Dec. 20, 2022, under Application No. 18/084,671.

*For further informatio...