ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,686, issued on Feb. 10, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Wafer total thickness variation using maskless implant" was invented by Qintao Zhang (Mt Kisco, N.Y.) and Ludovico Megalini (Mountain View, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein are directed to localized wafer thickness correction. In some embodiments, a method may include providing a substrate including an upper surface having a raised portion extending above a plane defined by the upper surface, and a non-raised portion adjacent the raised portion. The method may further include performing a metrology scan of the upper surface ...