US Patent Issued to Applied Materials on Aug. 4 for "Tantalum doped ruthenium layers for interconnects" (California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,989, issued on Aug. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Tantalum doped ruthenium layers for interconnects" was invented by Shinjae Hwang (Santa Clara, Calif.), Feng Chen (San Jose, Calif.), Muthukumar Kaliappan (Fremont, Calif.) and Michael Haverty (Mountain View, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixtur...