ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,938, issued on Aug. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Radical plasma treatment for semiconductor metal gate stack" was invented by Zhihui Liu (Sunnyvale, Calif.), Seshadri Ganguli (Sunnyvale, Calif.), Tianyi Huang (Santa Clara, Calif.), Yixiong Yang (Fremont, Calif.), Srinivas Gandikota (Santa Clara, Calif.), Yuanhua Zheng (Burlingame, Calif.), Yongjing Lin (San Jose, Calif.), Keyur Karandikar (San Jose, Calif.) and Elizabeth Mao (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include tr...