US Patent Issued to Applied Materials on Aug. 25 for "Structure and technique of photo-defined semiconductor device with selective dielectric constant reduction" (New Hampshire Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,717,995, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Structure and technique of photo-defined semiconductor device with selective dielectric constant reduction" was invented by Benjamin D. Briggs (Merrimack, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate. The semiconductor device may also include a dielectric material characterized, at least in part, by a dielectric constant. The semiconductor device may include a metallic pathway formed in the dielectric material. The semiconductor device may include a region about the metallic pathway of the semiconductor device ...