US Patent Issued to Applied Materials on Aug. 25 for "Stress relaxation trenches for gallium nitride microLED layers on silicon substrates" (New York, California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,912, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Stress relaxation trenches for gallium nitride microLED layers on silicon substrates" was invented by Tyler Sherwood (Fonda, N.Y.) and Raghav Sreenivasan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microLED-quality layer of gallium nitride (GaN) may be formed above a silicon substrate for microLED devices to be formed. Typically, mismatches between the crystal lattice of the GaN and the silicon substrate cause internal stresses that bow the wafer. To relieve these stresses, a pattern of trenches may be etched into the GaN layer between the di...