ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,125, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Multicathode PVD system for high aspect ratio barrier seed deposition" was invented by Harish Y. Penmethsa (Dublin, Calif.) and Ming-Jui Li (Sunnyvale, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece on it. The PVD chamber includes a lid assembly include...