US Patent Issued to Applied Materials on April 14 for "Low-flow radical gas geometrical control through two-dimensional compression between plasma source and chemical reactor" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,252, issued on April 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Low-flow radical gas geometrical control through two-dimensional compression between plasma source and chemical reactor" was invented by Edy Cardona (Fremont, Calif.), Eric Kihara Shono (San Mateo, Calif.), Martin John Ripley (San Jose, Calif.), Hansel Lo (San Jose, Calif.) and Christopher S. Olsen (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to a processing system comprising a flow assembly for processing thin substrates using low flow rates. The flow assembly comprises at least one compression part co...