US Patent Issued to Applied Materials Israel on March 17 for "Overlay measurement between layers of a semiconductor specimen based on center of symmetry (COS) localization" (Israeli Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,579,628, issued on March 17, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).

"Overlay measurement between layers of a semiconductor specimen based on center of symmetry (COS) localization" was invented by Dror Alumot (Tel Aviv, Israel), Tal Ben-Shlomo (Givatayim, Israel), Vladislav Kaplan (Raanana, Israel), Yaniv Abramovitz (Mazkeret Batya, Israel), Dan Tuvia Fuchs (Tel Aviv, Israel) and Michael Elliot Adel (Zichron Ya'akov, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a system and method of determining an overlay measurement between a first layer and a second layer of a specimen. The method includes acquirin...