US Patent Issued to Applied Materials, National University of Singapore on Oct. 20 for "Methods of forming conformal silicon oxycarbonitride thin films on high aspect ratio semiconductor structures" (Singaporean, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,764, issued on Oct. 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.) and National University of Singapore (Singapore).

"Methods of forming conformal silicon oxycarbonitride thin films on high aspect ratio semiconductor structures" was invented by Xinke Wang (Singapore), Lakmal C. Kalutarage (San Jose, Calif.), Bhaskar Jyoti Bhuyan (San Jose, Calif.), Mark Saly (Santa Clara, Calif.), John Sudijono (Singapore), SeyedMahmoud Hosseini (Sunnyvale, Calif.), Wei Shi (Singapore) and Yuye Kang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing high-quality conformal silicon oxycarbonitride (SiOCN) films in the for...