ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,849, issued on Aug. 18, was assigned to Applied Materials Inc. (Santa Clara, Calif.) and National University of Singapore (Singapore).
"In situ acyclic diamino carbene (ADC) deposition" was invented by Wei Chun Lim (Singapore), Andrea Leoncini (Singapore), Han Vinh Huynh (Singapore) and Sara Raquel Mota Merelo de Aguiar (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of selectively depositing a passivation layer on a metal surface of a semiconductor substrate are described. Exemplary methods may include exposing the semiconductor substrate having a metal surface and a non-metal surface to a first precursor to form a first portion o...