US Patent Issued to AP MEMORY TECHNOLOGY on April 21 for "Capacitor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,246, issued on April 21, was assigned to AP MEMORY TECHNOLOGY Corp. (Hsinchu County, Taiwan).

"Capacitor device and method for manufacturing the same" was invented by Wen-Liang Chen (Hsinchu County, Taiwan) and Yen-Jun Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor device is provided. The capacitor device includes a capacitor structure, a conductive line, an interlayer dielectric (ILD) and a first via conductor. The capacitor structure includes a lower electrode and an upper electrode. The conductive line is leveled with the lower electrode and electrically isolated from the lower electrode. The ILD is disposed over ...