ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,755, issued on July 28, was assigned to AOI ELECTRONICS Co. LTD. (Kagawa, Japan).
"Semiconductor device and method of manufacturing the same" was invented by Shinji Wakisaka (Tokyo), Masato Fukushima (Tokyo) and Takayuki Hiroishi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor wafer has a first pad electrode and a plurality of second pad electrodes formed on an upper surface thereof. A first opening and a plurality of second openings are formed in an insulating film covering the first pad electrode and the plurality of second pad electrodes. The first pad electrode is electrically connected to a first redistribution wiring in t...