US Patent Issued to ANSYS on Jan. 20 for "Random-walk based capacitance extraction with optimized transition volumes" (Greek Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,517, issued on Jan. 20, was assigned to ANSYS INC. (Canonsburg, Pa.).

"Random-walk based capacitance extraction with optimized transition volumes" was invented by Marios Visvardis (Athens, Greece), Periklis Liaskovitis (Agia Paraskevi, Greece), Efthymios Efstathiou (Athens, Greece) and Dimitrios Skrepetos (Alimos, Greece).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CAD method for capacitance extraction includes decomposing a semiconductor structure model representing a three-dimensional, into virtual layers. Each virtual layer has polygons corresponding to conductors in the semiconductor structure model. The semiconductor structure model or incl...