ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,436, issued on May 12, was assigned to ANHUI HUASUN ENERGY Co. LTD. (Xuancheng, China).
"Heterojunction cell and method for preparing same" was invented by Xiaohua Xu (Xuancheng, China), Ke Xin (Xuancheng, China), Su Zhou (Xuancheng, China), Daoren Gong (Xuancheng, China), Wenjing Wang (Xuancheng, China), Chen Li (Xuancheng, China), Mengying Chen (Xuancheng, China) and Shangzhi Cheng (Xuancheng, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor...