US Patent Issued to AMS-OSRAM INTERNATIONAL on Sept. 8 for "Optoelectronic semiconductor device with reduced light absorption and method for manufacturing of an optoelectronic semiconductor device with reduced light absorption" (Malaysian, German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,317, issued on Sept. 8, was assigned to AMS-OSRAM INTERNATIONAL GMBH (Regensburg, Germany).

"Optoelectronic semiconductor device with reduced light absorption and method for manufacturing of an optoelectronic semiconductor device with reduced light absorption" was invented by Fabian Kopp (Tanjung Tokong, Malaysia), Attila Molnar (Gelugor, Malaysia) and Lutz Hoeppel (Alteglofsheim, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "An optoelectronic semiconductor device may include a carrier comprising a patterned surface and a semiconductor layer sequence arranged on the carrier. The semiconductor layer sequence may include a first semiconductor...