US Patent Issued to ams on Sept. 1 for "On-chip integration of indium tin oxide (ITO) layers for ohmic contact to bond pads" (Dutch Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,261, issued on Sept. 1, was assigned to ams AG (Premstaetten, Austria).

"On-chip integration of indium tin oxide (ITO) layers for ohmic contact to bond pads" was invented by Gerhard Eilmsteiner (Eindhoven, Netherlands), Hannes Brandner (Eindhoven, Netherlands) and Patrik Pertl (Eindhoven, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-...