US Patent Issued to Amazon Technologies on Oct. 20 for "Memory access pattern truncation along most-significant dimension" (Washington Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,769,477, issued on Oct. 20, was assigned to Amazon Technologies Inc. (Seattle).

"Memory access pattern truncation along most-significant dimension" was invented by Hayden Stone Allen (Seattle) and Xin Liu (Issaquah, Wash.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are disclosed for truncating memory access patterns to minimize unnecessary memory accesses. A write access pattern for an instruction from a set of memory access instructions is determined. The write access pattern indicates which of a set of memory elements of a memory region of a memory are written to during execution of the instruction. One or more read access patterns are d...