ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,772, issued on March 17, was assigned to Alliance for Energy Innovation LLC, MicroLink Devices Inc. and South Dakota Board of Regents.
"Strain balanced direct bandgap aluminum indium phosphide quantum wells for light emitting diodes" was invented by Kirstin Alberi (Denver), Christopher Leo Stender (Glenview, Ill.) and Scott Phillip Ahrenkiel (Golden, Colo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap AlxIn1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is ...