US Patent Issued to Allegro MicroSystems on Feb. 17 for "Hall effect device with trench about a micron or greater in depth" (New Hampshire, Florida Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,561, issued on Feb. 17, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Hall effect device with trench about a micron or greater in depth" was invented by Thomas S. Chung (Merrimack, N.H.), Maxim Klebanov (Palm Coast, Fla.) and Sundar Chetlur (Bedford, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a Hall effect device includes an implantation layer; an epitaxial layer located above the implantation layer; a trench filled with a dielectric material and extending from a top surface of the epitaxial layer into the implantation layer and defining an enclosed region; a buried layer the epitaxial layer from the implantat...